Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / NTJD1155LT1G
Part Number | NTJD1155LT1G |
Datasheet | NTJD1155LT1G datasheet |
Description | MOSFET N/P-CH 8V 1.3A SOT-363 |
Manufacturer | ON Semiconductor |
Series | - |
Part Status | Active |
FET Type | N and P-Channel |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 8V |
Current - Continuous Drain (Id) @ 25°C | 1.3A |
Rds On (Max) @ Id, Vgs | 175 mOhm @ 1.2A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | - |
Input Capacitance (Ciss) (Max) @ Vds | - |
Power - Max | 400mW |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | SC-88/SC70-6/SOT-363 |