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Product Introduction

TK4A60DB(STA4,Q,M)

Part Number
TK4A60DB(STA4,Q,M)
Manufacturer/Brand
Toshiba Semiconductor and Storage
Description
MOSFET N-CH 600V 3.7A TO-220SIS
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
π-MOSVII
Quantity
2908pcs Stock Available.

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Product Specifications

Part Number TK4A60DB(STA4,Q,M)
Datasheet TK4A60DB(STA4,Q,M) datasheet
Description MOSFET N-CH 600V 3.7A TO-220SIS
Manufacturer Toshiba Semiconductor and Storage
Series π-MOSVII
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2 Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id 4.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 540pF @ 25V
FET Feature -
Power Dissipation (Max) 35W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220SIS
Package / Case TO-220-3 Full Pack

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