Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / SI4816BDY-T1-GE3
Part Number | SI4816BDY-T1-GE3 |
Datasheet | SI4816BDY-T1-GE3 datasheet |
Description | MOSFET 2N-CH 30V 5.8A 8-SOIC |
Manufacturer | Vishay Siliconix |
Series | LITTLE FOOT® |
Part Status | Active |
FET Type | 2 N-Channel (Half Bridge) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 5.8A, 8.2A |
Rds On (Max) @ Id, Vgs | 18.5 mOhm @ 6.8A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 10nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Power - Max | 1W, 1.25W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SO |