Product Introduction
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Product Specifications
Part Number |
2N6849U |
Datasheet |
2N6849U datasheet |
Description |
MOSFET P-CH 100V 18-LCC |
Manufacturer |
Microsemi Corporation |
Series |
- |
Part Status |
Obsolete |
FET Type |
P-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
100V |
Current - Continuous Drain (Id) @ 25°C |
6.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
300 mOhm @ 4.1A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
34.8nC @ 10V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
- |
FET Feature |
- |
Power Dissipation (Max) |
800mW (Ta), 25W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
18-ULCC (9.14x7.49) |
Package / Case |
18-CLCC |
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