Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / IPG20N10S4L22AATMA1
Part Number | IPG20N10S4L22AATMA1 |
Datasheet | IPG20N10S4L22AATMA1 datasheet |
Description | MOSFET 2N-CH 100V 20A TDSON-8 |
Manufacturer | Infineon Technologies |
Series | OptiMOS™ |
Part Status | Active |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 20A |
Rds On (Max) @ Id, Vgs | 22 mOhm @ 17A, 10V |
Vgs(th) (Max) @ Id | 2.1V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs | 27nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1755pF @ 25V |
Power - Max | 60W |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-PowerVDFN |
Supplier Device Package | PG-TDSON-8-10 |