![JieTai](/logo.png?v1)
Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / VWM200-01P
Part Number | VWM200-01P |
Description | MOSFET 6N-CH 100V 210A V2 |
Manufacturer | IXYS |
Series | - |
Part Status | Obsolete |
FET Type | 6 N-Channel (3-Phase Bridge) |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 210A |
Rds On (Max) @ Id, Vgs | 5.2 mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id | 4V @ 2mA |
Gate Charge (Qg) (Max) @ Vgs | 430nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Power - Max | - |
Operating Temperature | -40°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Package / Case | V2-PAK |
Supplier Device Package | V2-PAK |