Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SIA430DJT-T1-GE3

Product Introduction

SIA430DJT-T1-GE3

Part Number
SIA430DJT-T1-GE3
Manufacturer/Brand
Vishay Siliconix
Description
MOSFET N-CH 20V 12A SC70-6
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
12pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number SIA430DJT-T1-GE3
Description MOSFET N-CH 20V 12A SC70-6
Manufacturer Vishay Siliconix
Series -
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 13.5 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 800pF @ 10V
FET Feature -
Power Dissipation (Max) 19.2W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SC-70-6 Single
Package / Case PowerPAK® SC-70-6

Latest Products for Transistors - FETs, MOSFETs - Single

DMTH6016LFVWQ-7

Diodes Incorporated

MOSFET BVDSS 41V-60V POWERDI333

DMTH8012LPSW-13

Diodes Incorporated

MOSFET N-CH 80V 53.7A POWERDI506

FDP2D3N10C

ON Semiconductor

MOSFET N-CH 100V 222A TO220-3

SCTH90N65G2V-7

STMicroelectronics

SILICON CARBIDE POWER MOSFET 650

SCTW90N65G2V

STMicroelectronics

SILICON CARBIDE POWER MOSFET 650

GA50JT06-258

GeneSiC Semiconductor

TRANS SJT 600V 100A

Related Products