Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IXFB30N120P
Part Number | IXFB30N120P |
Datasheet | IXFB30N120P datasheet |
Description | MOSFET N-CH 1200V 30A PLUS264 |
Manufacturer | IXYS |
Series | HiPerFET™, PolarP2™ |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 1200V |
Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 350 mOhm @ 500mA, 10V |
Vgs(th) (Max) @ Id | 6.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 310nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 22500pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 1250W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PLUS264™ |
Package / Case | TO-264-3, TO-264AA |