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Product Introduction

SI3900DV-T1-GE3

Part Number
SI3900DV-T1-GE3
Manufacturer/Brand
Vishay Siliconix
Description
MOSFET 2N-CH 20V 2A 6-TSOP
Category
Transistors - FETs, MOSFETs - Arrays
RoHs Status
Lead free / RoHS Compliant
Series
TrenchFET®
Quantity
47pcs Stock Available.

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Product Specifications

Part Number SI3900DV-T1-GE3
Description MOSFET 2N-CH 20V 2A 6-TSOP
Manufacturer Vishay Siliconix
Series TrenchFET®
Part Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 2A
Rds On (Max) @ Id, Vgs 125 mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 830mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Supplier Device Package 6-TSOP

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