![JieTai](/logo.png?v1)
Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SI4451DY-T1-GE3
Part Number | SI4451DY-T1-GE3 |
Description | MOSFET P-CH 12V 10A 8-SOIC |
Manufacturer | Vishay Siliconix |
Series | TrenchFET® |
Part Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 12V |
Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs | 8.25 mOhm @ 14A, 4.5V |
Vgs(th) (Max) @ Id | 800mV @ 850µA |
Gate Charge (Qg) (Max) @ Vgs | 120nC @ 4.5V |
Vgs (Max) | ±8V |
Input Capacitance (Ciss) (Max) @ Vds | - |
FET Feature | - |
Power Dissipation (Max) | 1.5W (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |