Product Introduction
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See Product Specifications
Product Specifications
Part Number |
EPC2102 |
Datasheet |
EPC2102 datasheet |
Description |
GAN TRANS SYMMETRICAL HALF BRIDG |
Manufacturer |
EPC |
Series |
eGaN® |
Part Status |
Active |
FET Type |
2 N-Channel (Half Bridge) |
FET Feature |
GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) |
60V |
Current - Continuous Drain (Id) @ 25°C |
23A |
Rds On (Max) @ Id, Vgs |
4.4 mOhm @ 20A, 5V |
Vgs(th) (Max) @ Id |
2.5V @ 7mA |
Gate Charge (Qg) (Max) @ Vgs |
6.8nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds |
830pF @ 30V |
Power - Max |
- |
Operating Temperature |
-40°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Package / Case |
Die |
Supplier Device Package |
Die |
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