Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / FDG6321C-F169
Part Number | FDG6321C-F169 |
Datasheet | FDG6321C-F169 datasheet |
Description | INTEGRATED CIRCUIT |
Manufacturer | ON Semiconductor |
Series | - |
Part Status | Obsolete |
FET Type | N and P-Channel |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 25V |
Current - Continuous Drain (Id) @ 25°C | 500mA (Ta), 410mA (Ta) |
Rds On (Max) @ Id, Vgs | 450 mOhm @ 500mA, 4.5V, 1.1 Ohm @ 410mA, 4.5V |
Vgs(th) (Max) @ Id | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 2.3nC @ 4.5V, 1.5nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 10V, 62pF @ 10V |
Power - Max | 300mW |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | SC-88/SC70-6/SOT-363 |