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Part Number | SSM3K316T(TE85L,F) |
Datasheet | SSM3K316T(TE85L,F) datasheet |
Description | MOSFET N-CH 30V 4A TSM |
Manufacturer | Toshiba Semiconductor and Storage |
Series | - |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 10V |
Rds On (Max) @ Id, Vgs | 53 mOhm @ 3A, 10V |
Vgs(th) (Max) @ Id | 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 4.3nC @ 4V |
Vgs (Max) | ±12V |
Input Capacitance (Ciss) (Max) @ Vds | 270pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 700mW (Ta) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TSM |
Package / Case | TO-236-3, SC-59, SOT-23-3 |