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Product Introduction

SI4900DY-T1-GE3

Part Number
SI4900DY-T1-GE3
Manufacturer/Brand
Vishay Siliconix
Description
MOSFET 2N-CH 60V 5.3A 8-SOIC
Category
Transistors - FETs, MOSFETs - Arrays
RoHs Status
Lead free / RoHS Compliant
Series
TrenchFET®
Quantity
2648pcs Stock Available.

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Product Specifications

Part Number SI4900DY-T1-GE3
Datasheet SI4900DY-T1-GE3 datasheet
Description MOSFET 2N-CH 60V 5.3A 8-SOIC
Manufacturer Vishay Siliconix
Series TrenchFET®
Part Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 5.3A
Rds On (Max) @ Id, Vgs 58 mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 665pF @ 15V
Power - Max 3.1W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO

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