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Product Introduction
SI4900DY-T1-GE3
- Part Number
- SI4900DY-T1-GE3
- Manufacturer/Brand
- Vishay Siliconix
- Description
- MOSFET 2N-CH 60V 5.3A 8-SOIC
- Category
- Transistors - FETs, MOSFETs - Arrays
- RoHs Status
- Lead free / RoHS Compliant
- Series
- TrenchFET®
- Quantity
- 2648pcs Stock Available.
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See Product Specifications
See Product Specifications
Product Specifications
| Part Number | SI4900DY-T1-GE3 |
| Description | MOSFET 2N-CH 60V 5.3A 8-SOIC |
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 5.3A |
| Rds On (Max) @ Id, Vgs | 58 mOhm @ 4.3A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 665pF @ 15V |
| Power - Max | 3.1W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SO |
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