
Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / APT66M60B2

| Part Number | APT66M60B2 |
| Datasheet | APT66M60B2 datasheet |
| Description | MOSFET N-CH 600V 66A T-MAX |
| Manufacturer | Microsemi Corporation |
| Series | - |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 100 mOhm @ 33A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Gate Charge (Qg) (Max) @ Vgs | 330nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 13190pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 1135W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | T-MAX™ [B2] |
| Package / Case | TO-247-3 Variant |