Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SIHU6N62E-GE3
Part Number | SIHU6N62E-GE3 |
Datasheet | SIHU6N62E-GE3 datasheet |
Description | MOSFET N-CH 620V 6A TO-251 |
Manufacturer | Vishay Siliconix |
Series | - |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 620V |
Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 900 mOhm @ 3A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 34nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 578pF @ 100V |
FET Feature | - |
Power Dissipation (Max) | 78W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | IPAK (TO-251) |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |