Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IXTF6N200P3
Part Number | IXTF6N200P3 |
Datasheet | IXTF6N200P3 datasheet |
Description | MOSFET N-CH |
Manufacturer | IXYS |
Series | Polar™ |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 2000V |
Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 4.2 Ohm @ 3A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 143nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 3700pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 215W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | ISOPLUS i4-PAC™ |
Package / Case | ISOPLUSi5-Pak™ |