
Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / NSVEMC2DXV5T1G

| Part Number | NSVEMC2DXV5T1G |
| Datasheet | NSVEMC2DXV5T1G datasheet |
| Description | TRANS NPN/PNP 50V BIPOLAR SOT553 |
| Manufacturer | ON Semiconductor |
| Series | - |
| Part Status | Active |
| Transistor Type | 1 NPN, 1 PNP - Pre - Biased (Base-Collector Junction) |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) | 22 kOhms |
| Resistor - Emitter Base (R2) | 22 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 10V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| Frequency - Transition | - |
| Power - Max | 500mW |
| Mounting Type | Surface Mount |
| Package / Case | SOT-553 |
| Supplier Device Package | SOT-553 |