Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPI50R399CPXKSA1
Part Number | IPI50R399CPXKSA1 |
Datasheet | IPI50R399CPXKSA1 datasheet |
Description | MOSFET N-CH 500V 9A TO-262 |
Manufacturer | Infineon Technologies |
Series | CoolMOS™ |
Part Status | Not For New Designs |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 399 mOhm @ 4.9A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 330µA |
Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 890pF @ 100V |
FET Feature | - |
Power Dissipation (Max) | 83W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO262-3 |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |