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Part Number | 2SJ380(F) |
Datasheet | 2SJ380(F) datasheet |
Description | MOSFET P-CH 100V 12A TO220NIS |
Manufacturer | Toshiba Semiconductor and Storage |
Series | - |
Part Status | Obsolete |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
Rds On (Max) @ Id, Vgs | 210 mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id | 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 48nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1100pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 35W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220NIS |
Package / Case | TO-220-3 Full Pack |