Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / DMN80H2D0SCTI
Part Number | DMN80H2D0SCTI |
Datasheet | DMN80H2D0SCTI datasheet |
Description | MOSFET N-CH 800V 7A ITO220AB |
Manufacturer | Diodes Incorporated |
Series | - |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 2 Ohm @ 2.5A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 35.4nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 1253pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 41W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | ITO-220AB |
Package / Case | TO-220-3 Full Pack, Isolated Tab |