Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPN80R1K4P7ATMA1
Product Introduction
IPN80R1K4P7ATMA1
- Part Number
- IPN80R1K4P7ATMA1
- Manufacturer/Brand
- Infineon Technologies
- Description
- MOSFET N-CHANNEL 800V 4A SOT223
- Category
- Transistors - FETs, MOSFETs - Single
- RoHs Status
- Lead free / RoHS Compliant
- Series
- CoolMOS™ P7
- Quantity
- 4561pcs Stock Available.
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See Product Specifications
See Product Specifications
Product Specifications
| Part Number | IPN80R1K4P7ATMA1 |
| Datasheet | IPN80R1K4P7ATMA1 datasheet |
| Description | MOSFET N-CHANNEL 800V 4A SOT223 |
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ P7 |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1.4 Ohm @ 1.4A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 70µA |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 250pF @ 500V |
| FET Feature | - |
| Power Dissipation (Max) | 7W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-SOT223 |
| Package / Case | TO-261-3 |
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