Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / BVSS123LT1G
Part Number | BVSS123LT1G |
Datasheet | BVSS123LT1G datasheet |
Description | MOSFET N-CH 100V 170MA SOT-23-3 |
Manufacturer | ON Semiconductor |
Series | - |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 170mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 6 Ohm @ 100mA, 10V |
Vgs(th) (Max) @ Id | 2.8V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | - |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 20pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 225mW (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SOT-23-3 |
Package / Case | TO-236-3, SC-59, SOT-23-3 |