Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / AUIRF7379QTR
Part Number | AUIRF7379QTR |
Datasheet | AUIRF7379QTR datasheet |
Description | MOSFET N/P-CH 30V 5.8A 8SOIC |
Manufacturer | Infineon Technologies |
Series | HEXFET® |
Part Status | Active |
FET Type | N and P-Channel |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 5.8A, 4.3A |
Rds On (Max) @ Id, Vgs | 45 mOhm @ 5.8A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 520pF @ 25V |
Power - Max | 2.5W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SO |