Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / RN1316,LF

Product Introduction

RN1316,LF

Part Number
RN1316,LF
Manufacturer/Brand
Toshiba Semiconductor and Storage
Description
TRANS PREBIAS NPN 0.1W USM
Category
Transistors - Bipolar (BJT) - Single, Pre-Biased
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
3179pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number RN1316,LF
Datasheet RN1316,LF datasheet
Description TRANS PREBIAS NPN 0.1W USM
Manufacturer Toshiba Semiconductor and Storage
Series -
Part Status Active
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 4.7 kOhms
Resistor - Emitter Base (R2) 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition 250MHz
Power - Max 100mW
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Supplier Device Package USM

Latest Products for Transistors - Bipolar (BJT) - Single, Pre-Biased

RN1106MFV,L3F

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN

RN1110MFV,L3F

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.15W VESM

RN1117MFV,L3F

Toshiba Semiconductor and Storage

TRANS NPN PREBIAS 50V 100MA VESM

RN1130MFV,L3F

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.15W VESM

RN1103MFV(TPL3)

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 150MW VESM

RN1101MFV,L3F

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V SOT723