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| Part Number | IRF8910GPBF |
| Datasheet | IRF8910GPBF datasheet |
| Description | MOSFET 2N-CH 20V 10A 8-SO |
| Manufacturer | Infineon Technologies |
| Series | HEXFET® |
| Part Status | Obsolete |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 10A |
| Rds On (Max) @ Id, Vgs | 13.4 mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 2.55V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 960pF @ 10V |
| Power - Max | 2W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SO |