Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IRLW610ATM

Product Introduction

IRLW610ATM

Part Number
IRLW610ATM
Manufacturer/Brand
ON Semiconductor
Description
MOSFET N-CH 200V 3.3A I2PAK
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
638pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number IRLW610ATM
Description MOSFET N-CH 200V 3.3A I2PAK
Manufacturer ON Semiconductor
Series -
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 3.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 1.5 Ohm @ 1.65A, 5V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9nC @ 5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 240pF @ 25V
FET Feature -
Power Dissipation (Max) 3.1W (Ta), 33W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK (TO-262)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA

Latest Products for Transistors - FETs, MOSFETs - Single

IPS70N10S3L-12

Infineon Technologies

MOSFET N-CH 1TO251-3

IPS70R2K0CEE8211

Infineon Technologies

MOSFET N-CH

IPS70R600CEAKMA2

Infineon Technologies

CONSUMER

IPT029N08N5ATMA1

Infineon Technologies

MV POWER MOS

IPT043N15N5ATMA1

Infineon Technologies

MV POWER MOS

IPT210N25NFDATMA1

Infineon Technologies

MV POWER MOS