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Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / TK62J60W,S1VQ
Part Number | TK62J60W,S1VQ |
Description | MOSFET N CH 600V 61.8A TO-3PN |
Manufacturer | Toshiba Semiconductor and Storage |
Series | DTMOSIV |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 61.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 38 mOhm @ 30.9A, 10V |
Vgs(th) (Max) @ Id | 3.7V @ 3.1mA |
Gate Charge (Qg) (Max) @ Vgs | 180nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 6500pF @ 300V |
FET Feature | Super Junction |
Power Dissipation (Max) | 400W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-3P(N) |
Package / Case | TO-3P-3, SC-65-3 |