Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / IRF9910TR
Part Number | IRF9910TR |
Datasheet | IRF9910TR datasheet |
Description | MOSFET 2N-CH 20V 10A 8-SOIC |
Manufacturer | Infineon Technologies |
Series | HEXFET® |
Part Status | Obsolete |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 10A, 12A |
Rds On (Max) @ Id, Vgs | 13.4 mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id | 2.55V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 900pF @ 10V |
Power - Max | 2W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SO |