Product Introduction
Images are for reference only
See Product Specifications
Product Specifications
Part Number |
IRF7102 |
Datasheet |
IRF7102 datasheet |
Description |
MOSFET 2N-CH 50V 2A 8-SOIC |
Manufacturer |
Infineon Technologies |
Series |
HEXFET® |
Part Status |
Obsolete |
FET Type |
2 N-Channel (Dual) |
FET Feature |
Standard |
Drain to Source Voltage (Vdss) |
50V |
Current - Continuous Drain (Id) @ 25°C |
2A |
Rds On (Max) @ Id, Vgs |
300 mOhm @ 1.5A, 10V |
Vgs(th) (Max) @ Id |
3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
6.6nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds |
120pF @ 25V |
Power - Max |
2W |
Operating Temperature |
- |
Mounting Type |
Surface Mount |
Package / Case |
8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package |
8-SO |
Latest Products for Transistors - FETs, MOSFETs - Arrays
Infineon Technologies
MOSFET 2P-CH 20V 4.3A MICRO8
Infineon Technologies
MOSFET 2N-CH 30V 3.6A PQFN
Infineon Technologies
MOSFET 2N-CH 20V 4.5A PQFN
Infineon Technologies
MOSFET 2P-CH 30V 2.3A PQFN
Infineon Technologies
MOSFET 2P-CH 30V 2.3A PQFN
Infineon Technologies
MOSFET 2N-CH 20V 4.5A PQFN