Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / SI4941EDY-T1-E3
Part Number | SI4941EDY-T1-E3 |
Datasheet | SI4941EDY-T1-E3 datasheet |
Description | MOSFET 2P-CH 30V 10A 8-SOIC |
Manufacturer | Vishay Siliconix |
Series | TrenchFET® |
Part Status | Obsolete |
FET Type | 2 P-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 10A |
Rds On (Max) @ Id, Vgs | 21 mOhm @ 8.3A, 10V |
Vgs(th) (Max) @ Id | 2.8V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 70nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Power - Max | 3.6W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SO |