Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / FDB86102LZ
Part Number | FDB86102LZ |
Datasheet | FDB86102LZ datasheet |
Description | MOSFET N-CH 100V 30A D2PAK |
Manufacturer | ON Semiconductor |
Series | PowerTrench® |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 8.3A (Ta), 30A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 24 mOhm @ 8.3A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 21nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1275pF @ 50V |
FET Feature | - |
Power Dissipation (Max) | 3.1W (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-263AB |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |