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Product Introduction

IPD65R600E6BTMA1

Part Number
IPD65R600E6BTMA1
Manufacturer/Brand
Infineon Technologies
Description
MOSFET N-CH 650V 7.3A TO252-3
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
CoolMOS™
Quantity
5355pcs Stock Available.

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Product Specifications

Part Number IPD65R600E6BTMA1
Datasheet IPD65R600E6BTMA1 datasheet
Description MOSFET N-CH 650V 7.3A TO252-3
Manufacturer Infineon Technologies
Series CoolMOS™
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 600 mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id 3.5V @ 210µA
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 440pF @ 100V
FET Feature -
Power Dissipation (Max) 63W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

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