Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IRF3709ZPBF
Part Number | IRF3709ZPBF |
Datasheet | IRF3709ZPBF datasheet |
Description | MOSFET N-CH 30V 87A TO-220AB |
Manufacturer | Infineon Technologies |
Series | HEXFET® |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 87A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 6.3 mOhm @ 21A, 10V |
Vgs(th) (Max) @ Id | 2.25V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 26nC @ 4.5V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 2130pF @ 15V |
FET Feature | - |
Power Dissipation (Max) | 79W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |