Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IRLU3717PBF
Part Number | IRLU3717PBF |
Datasheet | IRLU3717PBF datasheet |
Description | MOSFET N-CH 20V 120A I-PAK |
Manufacturer | Infineon Technologies |
Series | HEXFET® |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 4 mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id | 2.45V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 31nC @ 4.5V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 2830pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 89W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I-PAK |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |