Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / APTML20UM18R010T1AG
Part Number | APTML20UM18R010T1AG |
Datasheet | APTML20UM18R010T1AG datasheet |
Description | MOSFET N-CH 200V 109A SP1 |
Manufacturer | Microsemi Corporation |
Series | - |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 109A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 19 mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id | 4V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs | - |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 9880pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 480W (Tc) |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Chassis Mount |
Supplier Device Package | SP1 |
Package / Case | SP1 |