Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / SQJ912BEP-T1_GE3
Part Number | SQJ912BEP-T1_GE3 |
Datasheet | SQJ912BEP-T1_GE3 datasheet |
Description | MOSFET N-CH DUAL 40V PPSO-8L |
Manufacturer | Vishay Siliconix |
Series | Automotive, AEC-Q101, TrenchFET® |
Part Status | Active |
FET Type | 2 N-Channel (Dual) |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
Rds On (Max) @ Id, Vgs | 11 mOhm @ 9A, 10V |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 60nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3000pF @ 25V |
Power - Max | 48W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | PowerPAK® SO-8 Dual |
Supplier Device Package | PowerPAK® SO-8 Dual |