Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SSM6J212FE,LF
Part Number | SSM6J212FE,LF |
Datasheet | SSM6J212FE,LF datasheet |
Description | MOSFET P-CH 20V 4A ES6 |
Manufacturer | Toshiba Semiconductor and Storage |
Series | U-MOSVI |
Part Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs | 40.7 mOhm @ 3A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 14.1nC @ 4.5V |
Vgs (Max) | ±8V |
Input Capacitance (Ciss) (Max) @ Vds | 970pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 500mW (Ta) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | ES6 |
Package / Case | SOT-563, SOT-666 |