Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IXTP24N65X2M
Part Number | IXTP24N65X2M |
Datasheet | IXTP24N65X2M datasheet |
Description | MOSFET N-CH |
Manufacturer | IXYS |
Series | - |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 145 mOhm @ 12A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 36nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 2060pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 37W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220 Isolated Tab |
Package / Case | TO-220-3 Full Pack, Isolated Tab |