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Part Number | SPI10N10L |
Datasheet | SPI10N10L datasheet |
Description | MOSFET N-CH 100V 10.3A I2PAK |
Manufacturer | Infineon Technologies |
Series | SIPMOS® |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 10.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 154 mOhm @ 8.1A, 10V |
Vgs(th) (Max) @ Id | 2V @ 21µA |
Gate Charge (Qg) (Max) @ Vgs | 22nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 444pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 50W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO262-3-1 |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |