Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / FDC6310P

Product Introduction

FDC6310P

Part Number
FDC6310P
Manufacturer/Brand
ON Semiconductor
Description
MOSFET 2P-CH 20V 2.2A SSOT-6
Category
Transistors - FETs, MOSFETs - Arrays
RoHs Status
Lead free / RoHS Compliant
Series
PowerTrench®
Quantity
26pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number FDC6310P
Datasheet FDC6310P datasheet
Description MOSFET 2P-CH 20V 2.2A SSOT-6
Manufacturer ON Semiconductor
Series PowerTrench®
Part Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 2.2A
Rds On (Max) @ Id, Vgs 125 mOhm @ 2.2A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 337pF @ 10V
Power - Max 700mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Supplier Device Package SuperSOT™-6

Latest Products for Transistors - FETs, MOSFETs - Arrays

IRF7389TR

Infineon Technologies

MOSFET N/P-CH 30V 8-SOIC

IRF7901D1

Infineon Technologies

MOSFET 2N-CH 30V 6.2A 8SOIC

IRF7901D1TR

Infineon Technologies

MOSFET 2N-CH 30V 6.2A 8SOIC

IRF7901D1TRPBF

Infineon Technologies

MOSFET 2N-CH 30V 6.2A 8SOIC

IRF7902PBF

Infineon Technologies

MOSFET 2N-CH 30V 6.4A/9.7A 8SOIC

IRF7902TRPBF

Infineon Technologies

MOSFET 2N-CH 30V 6.4A/9.7A 8SOIC