Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPD95R750P7ATMA1
Part Number | IPD95R750P7ATMA1 |
Datasheet | IPD95R750P7ATMA1 datasheet |
Description | MOSFET N-CH 950V 9A TO252 |
Manufacturer | Infineon Technologies |
Series | CoolMOS™ P7 |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 950V |
Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 750 mOhm @ 4.5A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 220µA |
Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 712pF @ 400V |
FET Feature | - |
Power Dissipation (Max) | 73W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO252-3 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |