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| Part Number | EPC2101ENG |
| Description | GAN TRANS 2N-CH 60V BUMPED DIE |
| Manufacturer | EPC |
| Series | eGaN® |
| Part Status | Discontinued at Digi-Key |
| FET Type | 2 N-Channel (Half Bridge) |
| FET Feature | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 9.5A, 38A |
| Rds On (Max) @ Id, Vgs | 11.5 mOhm @ 20A, 5V |
| Vgs(th) (Max) @ Id | 2.5V @ 2mA |
| Gate Charge (Qg) (Max) @ Vgs | 2.7nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 300pF @ 30V |
| Power - Max | - |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | Die |
| Supplier Device Package | Die |