Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / EPC2101ENG

Product Introduction

EPC2101ENG

Part Number
EPC2101ENG
Manufacturer/Brand
EPC
Description
GAN TRANS 2N-CH 60V BUMPED DIE
Category
Transistors - FETs, MOSFETs - Arrays
RoHs Status
Lead free / RoHS Compliant
Series
eGaN®
Quantity
9340pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number EPC2101ENG
Description GAN TRANS 2N-CH 60V BUMPED DIE
Manufacturer EPC
Series eGaN®
Part Status Discontinued at Digi-Key
FET Type 2 N-Channel (Half Bridge)
FET Feature GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 9.5A, 38A
Rds On (Max) @ Id, Vgs 11.5 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id 2.5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs 2.7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 300pF @ 30V
Power - Max -
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die

Latest Products for Transistors - FETs, MOSFETs - Arrays

BSC072N03LDGATMA1

Infineon Technologies

MOSFET 2N-CH 30V 11.5A 8TDSON

BSC750N10NDGATMA1

Infineon Technologies

MOSFET 2N-CH 100V 3.2A 8TDSON

BTS7904BATMA1

Infineon Technologies

MOSFET N/P-CH 55V/30V 40A TO263

DF23MR12W1M1B11BPSA1

Infineon Technologies

MOSFET MOD 1200V 25A

DF11MR12W1M1B11BPSA1

Infineon Technologies

MOSFET MOD 1200V 50A

DF11MR12W1M1B11BOMA1

Infineon Technologies

MOSFET MODULE 1200V 50A