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| Part Number | EPC2101ENG | 
| Description | GAN TRANS 2N-CH 60V BUMPED DIE | 
| Manufacturer | EPC | 
| Series | eGaN® | 
| Part Status | Discontinued at Digi-Key | 
| FET Type | 2 N-Channel (Half Bridge) | 
| FET Feature | GaNFET (Gallium Nitride) | 
| Drain to Source Voltage (Vdss) | 60V | 
| Current - Continuous Drain (Id) @ 25°C | 9.5A, 38A | 
| Rds On (Max) @ Id, Vgs | 11.5 mOhm @ 20A, 5V | 
| Vgs(th) (Max) @ Id | 2.5V @ 2mA | 
| Gate Charge (Qg) (Max) @ Vgs | 2.7nC @ 5V | 
| Input Capacitance (Ciss) (Max) @ Vds | 300pF @ 30V | 
| Power - Max | - | 
| Operating Temperature | -40°C ~ 150°C (TJ) | 
| Mounting Type | Surface Mount | 
| Package / Case | Die | 
| Supplier Device Package | Die |