Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / STB9NK80Z
Part Number | STB9NK80Z |
Datasheet | STB9NK80Z datasheet |
Description | MOSFET N-CH 800V D2PAK |
Manufacturer | STMicroelectronics |
Series | Automotive, AEC-Q101, SuperMESH™ |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25°C | 5.2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 1.8 Ohm @ 2.6A, 10V |
Vgs(th) (Max) @ Id | 4.5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | 40nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 1138pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 125W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D2PAK |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |