Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / PMV280ENEAR
Part Number | PMV280ENEAR |
Datasheet | PMV280ENEAR datasheet |
Description | MOSFET N-CH 100V 1.1A TO236AB |
Manufacturer | Nexperia USA Inc. |
Series | TrenchMOS™ |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 1.1A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 385 mOhm @ 1.1A, 10V |
Vgs(th) (Max) @ Id | 2.7V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 6.8nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 190pF @ 50V |
FET Feature | - |
Power Dissipation (Max) | 580mW (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-236AB |
Package / Case | TO-236-3, SC-59, SOT-23-3 |