Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / STH3N150-2
Part Number | STH3N150-2 |
Datasheet | STH3N150-2 datasheet |
Description | MOSFET N-CH 1500V 2.5A H2PAK-2 |
Manufacturer | STMicroelectronics |
Series | PowerMESH™ |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 1500V |
Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 9 Ohm @ 1.3A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 29.3nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 939pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 140W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | H²PAK |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab) Variant |