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Part Number | CSD13306WT |
Description | MOSFET N-CH 12V 6DSBGA |
Manufacturer | Texas Instruments |
Series | NexFET™ |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 12V |
Current - Continuous Drain (Id) @ 25°C | 3.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs | 10.2 mOhm @ 1.5A, 4.5V |
Vgs(th) (Max) @ Id | 1.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 11.2nC @ 4.5V |
Vgs (Max) | ±10V |
Input Capacitance (Ciss) (Max) @ Vds | 1370pF @ 6V |
FET Feature | - |
Power Dissipation (Max) | 1.9W (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 6-DSBGA (1x1.5) |
Package / Case | 6-UFBGA, DSBGA |