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Product Introduction

TPN1110ENH,L1Q

Part Number
TPN1110ENH,L1Q
Manufacturer/Brand
Toshiba Semiconductor and Storage
Description
MOSFET N-CH 200V 7.2A 8TSON
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
U-MOSVIII-H
Quantity
7858pcs Stock Available.

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Product Specifications

Part Number TPN1110ENH,L1Q
Datasheet TPN1110ENH,L1Q datasheet
Description MOSFET N-CH 200V 7.2A 8TSON
Manufacturer Toshiba Semiconductor and Storage
Series U-MOSVIII-H
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 7.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 114 mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id 4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs 7nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 600pF @ 100V
FET Feature -
Power Dissipation (Max) 700mW (Ta), 39W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-TSON Advance (3.3x3.3)
Package / Case 8-PowerVDFN

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