Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / 2SJ649-AZ
Part Number | 2SJ649-AZ |
Datasheet | 2SJ649-AZ datasheet |
Description | MOSFET P-CH 60V 20A TO-220 |
Manufacturer | Renesas Electronics America |
Series | - |
Part Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
Rds On (Max) @ Id, Vgs | 48 mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id | - |
Gate Charge (Qg) (Max) @ Vgs | 38nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1900pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 2W (Ta), 25W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220 Isolated Tab |
Package / Case | TO-220-3 Isolated Tab |