![JieTai](/logo.png?v1)
Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IXTD4N80P-3J
Part Number | IXTD4N80P-3J |
Description | MOSFET N-CH 800 |
Manufacturer | IXYS |
Series | PolarHV™ |
Part Status | Last Time Buy |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25°C | 3.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 3.4 Ohm @ 1.8A, 10V |
Vgs(th) (Max) @ Id | 5.5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | 14.2nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 750pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 100W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | Die |
Package / Case | Die |